Do you see any benefits from using eGaN FETS and ICs in power amplifiers in Wireless Base Stations?
EPC’s eGaN FETs and ICs are superb for applications in RF power amplifiers – especially in envelope tracking. Today Power Amplifiers ¶ commonly use depletion mode GaN FETs since they are capable of switching at several hundreds of MHz. The typical efficiency of PA is in the 20 to 30% since the Peak to Average Ratio (PAR) is very low. With the emerging technologies like LTE for wireless, the demand for power is going up and several new techniques like Envelope Tracking (ET) – where the voltage feeding the power amplifier is modulated corresponding the modulating signal – are evolving to improve the efficiency of PAs. eGaN FETs and ICs can switch at several tens of MHz at the voltage of interest in PAs, enabling the adoption of efficient Envelope Tracking architectures in these applications for improving the efficiencies. See the Envelope Tracking page more information on eGaN FETs and ICs in Envelope Tracking applications.