Does EPC plan to introduce integrated products based on the GaN technology, specifically with respect to integrated drivers?
Beyond just performance and cost improvement, the greatest opportunity for GaN technology to impact the power conversion market comes from its intrinsic ability to integrate multiple devices on the same substrate. GaN technology, as opposed to common silicon IC technology, will allow designers to implement monolithic power systems on a single chip in a more straightforward and cost-effective way.
Today, the most common building block used in power conversion is the half bridge. In 2014, EPC introduced a family of integrated half bridge devices which became the starting point for the journey towards a power system-on-a-chip. This trend was expanded with the introduction of the EPC2107 and EPC2108 which integrated half bridges with integrated synchronous bootstrap. In 2018 we further continued the integration path with the introduction of eGaN ICs combining gate drivers with high frequency GaN FETs in a single chip for improved efficiency, reduced size, and lower cost. In 2020 the ePower™ Stage IC family launched that redefines power conversion by integrating all functions in a single GaN-on-Si integrated circuit. These devices can be found in our product selector guide.