Does the GaN have a body diode? If so how does it compare with the Silicon MOSFETs with respect to forward voltage drop and reverse recovery characteristics?
eGaN FETs do not have a parasitic body diode like Si-FETs, but offer reverse conduction by a different mechanism. Only majority carriers are involved in GaN device conduction so there is zero reverse recovery. The forward voltage of the internal diode is higher than the diode forward drop in a silicon based FET, hence the dead time or the diode conduction time should be minimized to get maximum efficiency. In short, the body diode in eGaN FET acts like a Schottky diode with slightly higher forward drop. For further detail of the operation in this mode, please refer to eGaN FET Electrical Characteristics, or view the following videos:
How To GaN 01: Introduction – Material Compositions
How to GaN 03: Performance Characteristics