Hello. I am an electrical engineer in Korea. I’m currently designing a class D amplifier(Full-Bridge) based on the EPC9065 EV board. However, as shown in the figure below, there are many concerns due to EMI problems. I would like to ask if there is any way to explain it.
Hello, Thanks for your interest in EPC products.
GaN FETs switch faster than MOSFETs so many people ask the question how this affects EMI all the time. It is important to note that there is fundamentally no change in EMI energy simply because one device switches faster than another. I would like to recommend you to see the below linked video first about the effects of PCB layout, components, rise/fall times and reverse recovery(Qrr) to reduce the EMI generation.
HTG14 – Design Basics: EMI Mitigation Techniques (epc-co.com)
I hope this helps…