EPC2001 Cds = drain-source capacitance current spikes

Designing with GaN FETs and ICs
1

I noticed during simulation, that the Cds generates large current spikes from drain to source ~1A 20ns. depending of the dv/dt of Vd.
These currents are directly related to the Cds charge/discharge?
please if you could confirm.
Thank you
Fausto Bartra

2

Hello Fausto,
yes, in simulation you will often see significant currents charging and discharging the internal device capacitances. This is because although GaN FETs have small capacitances when compared to Si MOSFETs, they also switch much faster, so C⋅dv/dt currents can be high.