I am working on a project that requires GaN MOSFETs capable of switching 100V with both rise and fall times in the picosecond (ps) range, ideally around 1 nanosecond (ns) or faster. The application demands high-speed performance with precise control over switching times.
Could you recommend GaN MOSFETs and any necessary gate drivers that can meet these requirements? Additionally, any guidance on thermal management and PCB layout for such high-speed switching would be appreciated.
Hello Atul,
Probably some of our fastest devices are in the EPC8xxx series which have a separate Kelvin Source to enable fastest driving strength. You could start at looking at the EPC8010 (epc-co.com).
Depending on your current and thermal conditions you might need a lower Rds(on) part. I recommend you take a look at our buck tool selector where you can put more detailed conditions: GaN FET Selection Tool for Buck Converters (epc-co.com).
For the gate driver it depends on your topology, but you could start looking at LMG1210 | TI.com for a half-bridge gate driver, or LMG1020 | TI.com for a low side gate driver.
Hello,
Thank you for the recommendations on the GaN MOSFETs and gate drivers. As we are relatively new to designing with GaN devices, would it be possible for you to provide any reference schematics or design guidance for integrating these components into our circuit? Specifically, we would appreciate help with the schematic for the MOSFET and gate driver, as well as any considerations for layout, thermal management, and protection components.
Your assistance would be greatly appreciated, as this would help us ensure optimal performance for high-speed switching in our design.
Best regards,
Atul