What are the benefits of eGaN FETs in resonant and soft-switching applications?
eGaN FETs have a distinct advantage over silicon MOSFETS in hard switching applications because of the reduction of two key parameters – QGD and QRR,both of which have little impact in resonant and soft-switching converters. It has been demonstrated that eGaN FETs can also provide significant improvements in resonant and soft-switching applications when compared to Si MOSFETs by offering reduced output charge, QOSS, and gate charge, QG.
For more information, please refer to the white paper eGaN FETs in High Frequency Resonant Converters.