Where can I find information on the thermal resistance of eGaN devices?
Thermal resistance is a major factor in determining the capabilities of discrete power devices. From a device’s thermal characteristics both the maximum power dissipation and maximum current can be derived for user applications. While the thermal performance of traditional silicon MOSFETs is well understood, measuring the thermal performance of eGaN® FETs and ICs requires some further explanation. EPC has written the following application note investigating the testing method and results of thermal resistance measurements on eGaN FETs, EPC GaN Transistor Parametric Characterization Guide. Thermal resistance data can be found on the respective device datasheets on the parameteric selector guide
Additionally, thermal models can be found on the device models page.