Why are some GaN FET products suitable for ToF?

Your website says several GaN FET products as suitable for ToF.
What is the reason for this?
What characteristics differentiate them from your other GaN FET products?


Hello and thank you for your interest in EPC devices.
For ToF applications GaN offers a unique advantage of very small and fast devices with minimal parasitic elements which allow high peak currents with high bus voltages and extremely small pulse widths.
Many EPC GaN devices can be used for ToF applications depending on the specific applications requirements. Once the voltage class and peak current of the application have been identified, usually a smaller device will provide faster switching performance…
But I would first recommend you to take a look at our reference designs here (Lidar section):
Gallium Nitride Design Examples | GaN First Time Right | EPC (epc-co.com)