Will EPC make FETs with blocking voltages of 800V - 1200V in the near future?
We believe the technology is very capable of much higher blocking voltages; due to the nature of its high electron mobility, eGaN devices can be designed for high voltages with much less impact on RDS(ON) than silicon. Additionally, as a small device, the capacitances are much lower than those of trench MOSFETs per area allowing very high switching speeds. The result is a device that can provide the high blocking voltage requirement with little penalty on RDS(ON) and speed. We do not currently have products beyond 600V on our roadmap. For the latest on new product development sign up to receive news and product updates from EPC or by texting “EPC” to 22828.