Your threshold voltage is low compared with silicon MOSFETs. How do I handle dV/dt immunity?
It should also be noted that eGaN devices have a very low temperature coefficient for their threshold voltage. This gives the user added safety margin despite the lower threshold voltages at room temperature. The ratios of CGD to CGS are quite good in holding the device off under a dV/dt condition. This is a capacitive divider, so care must be taken in the gate drive to have a low resistance turn off and good layout such that inductance is minimized in the turn off loop to keep the effective impedance low. The magnitude will depend on dV/dt and voltage. Gate drivers designed specifically for eGaN FETs are listed on the eGaN Drivers and Controllers page