Can eGaN FETs be paralleled? If so what are the key elements for a good design?
eGaN Devices are positive temperature coefficient devices and are good candidates for parallel operation. However, since these devices can switch up to 10x faster than standard silicon FETs, special care must be taken in the layout and driving aspects of this configuration. EPC has written aan application note identifying the best paralleling configuration. Please refer to the Effectively Paralleling Gallium Nitride Transistors for High Current and High Frequency Applications application note.