With your ePower Chipsets (like the EPC23101), the low-side FET is not integrated. What benefits does this bring to a monolithically integrated half-bridge?
In integrated Circuits, area means cost and area means lower rdson. With EPC23101, we are optimizing the area since we include the high side GaNFET within the high side gate driver well area and we use all available area to have low rdson. The low side GaNFET is then added externally. This approach allows to optimize overall area usage and have low rdson.