Is the EPC2121 Internally Implemented as a Back-to-Back Structure of Two Unidirectional GaN HEMTs?

Characteristics of GaN FETs and ICs
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Hello,

I have read the datasheet as well as several other sources on the EPC2121 transistor and I am wondering how it is structured internally. I suspect that it is a back-to-back structure consisting of two unidirectional GaN HEMTs (B2B-2UDS). Various aspects of the datasheet seem to indicate this. However, it is not explicitly stated anywhere whether the EPC2121 is indeed a B2B-2UDS transistor or whether it is instead a monolithic bidirectional switch.

Could you please confirm whether the EPC2121 internally consists of a back-to-back structure with two unidirectional GaN transistors? How can this be identified unambiguously for the EPC2121 based on the information currently provided in the datasheet?

Sorry if my question sounds a bit naive; I am still relatively new to GaN technology.

Best regards,
Tom

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If possible, please delete this thread, since the question here is a duplicate of this thread. I must have submitted it twice.